PECVD process occured because high speed active electrons in plasmas crashed with neutral gas and make netural gas to pieces or at activation state which is easier to react. By ratio frequency making gases with atoms which is part of films to create plasma gases. Plasmas is more mobile and easy to get reaction and deposit to aimed thin films. the advantage is low basic temperature, fast depostion, high quality films, few pinhole and not easy to crack.
PECVD small type sliding open type tublar furnace system is cooling rapidly by sliding furnace body, and is equipped with different vacuum system to get aimed vacuum degree, and control to take in different gases by multiple channel high precision mass flow meter. It's an ideal choice for experiment of thin film graphene growth, metal films, ceramics films and compound films.
Mainly used in: Universities, science and research institutions for vacuum coating, nano-film material preparation, film graphene growth, metal films, ceramics films and compound films. Also in plasma cleaning etching.
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